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1

Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation

Nicoletti, Talitha, Santos, Sara Dereste dos, Martino, João Antonio, Aoulaiche, Marc, Veloso, Anabela, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 786 KB

english, 2014

2

Intrinsic Voltage Gain of Stacked GAA Nanosheet MOSFETs Operating at High Temperatures

Perina, Welder Fernandes, Silva, Vanessa Cristina Pereira, Martino, Joao Antonio, Agopian, Paula Ghedini Der, Simoen, Eddy, Veloso, Anabela

Journal:

ECS Transactions

Year:

2020

File:

PDF, 246 KB

2020

3

Impact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operation

Marcelo Antonio Pavanello, João Antonio Martino, Eddy Simoen, Cor Claeys

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 665 KB

english, 2005

4

Threshold voltages of SOI MuGFETs

Maria Glória Caño de Andrade, João Antonio Martino

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 564 KB

english, 2008

5

Impact of SEG on uniaxially strained MuGFET performance

Paula Ghedini Der Agopian, Vinícius Heltai Pacheco, João Antonio Martino, Eddy Simoen, Cor Claeys

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 428 KB

english, 2011

6

Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs

Marcelo Antonio Pavanello, João Antonio Martino, Eddy Simoen, Cor Claeys

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 263 KB

english, 2007

7

Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs

Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 271 KB

english, 2008

8

Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs

Marcelo Antonio Pavanello, Joao Antonio Martino, Eddy Simoen, Rita Rooyackers, Nadine Collaert, Cor Claeys

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 255 KB

english, 2008

9

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices

Renan Doria Trevisoli, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 881 KB

english, 2012

10

Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs

Marcelo Antonio Pavanello, Michelly de Souza, Joao Antonio Martino, Eddy Simoen, Cor Claeys

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 530 KB

english, 2012

11

Behavior of triple-gate Bulk FinFETs with and without DTMOS operation

Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 892 KB

english, 2012

12

Temperature impact on the tunnel fet off-state current components

Agopian, Paula Ghedini Der, Martino, Márcio Dalla Valle, Filho, Sebastião Gomes dos Santos, Martino, João Antonio, Rooyackers, Rita, Leonelli, Daniele, Claeys, Cor

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 993 KB

english, 2012

13

Threshold voltage extraction in Tunnel FETs

Ortiz-Conde, Adelmo, García-Sánchez, Francisco J., Muci, Juan, Sucre-González, Andrea, Martino, João Antonio, Agopian, Paula Ghedini Der, Claeys, Cor

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.58 MB

english, 2014

14

Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates

Doria, Rodrigo Trevisoli, Martino, João Antonio, Simoen, Eddy, Claeys, Cor, Pavanello, Marcelo Antonio

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 853 KB

english, 2013

15

Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices

Agopian, Paula Ghedini Der, Bordallo, Caio Cesar Mendes, Simoen, Eddy, Claeys, Cor, Martino, João Antonio

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 536 KB

english, 2013

16

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

Andrade, Maria Glória Caño de, Martino, João Antonio, Aoulaiche, Marc, Collaert, Nadine, Simoen, Eddy, Claeys, Cor

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 797 KB

english, 2014

17

TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs

Buhler, Rudolf Theoderich, Eneman, Geert, Favia, Paola, Witters, Liesbeth Johanna, Vincent, Benjamin, Hikavyy, Andriy, Loo, Roger, Bender, Hugo, Collaert, Nadine, Simoen, Eddy, Martino, Joao Antonio,

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.01 MB

english, 2015

18

Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism

Martino, Marcio Dalla Valle, Neves, Felipe, Ghedini Der Agopian, Paula, Martino, João Antonio, Vandooren, Anne, Rooyackers, Rita, Simoen, Eddy, Thean, Aaron, Claeys, Cor

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 899 KB

english, 2015

19

Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures

Oliveira, Alberto Vinicius de, Agopian, Paula Ghedini Der, Martino, Joao Antonio, Simoen, Eddy, Claeys, Cor, Collaert, Nadine, Thean, Aaron

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.14 MB

english, 2016

20

Study of line-TFET analog performance comparing with other TFET and MOSFET architectures

Agopian, Paula Ghedini Der, Martino, João Antonio, Vandooren, Anne, Rooyackers, Rita, Simoen, Eddy, Thean, Aaron, Claeys, Cor

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 692 KB

english, 2016

21

Proton-Irradiation Influence on Current Mirror Circuit Using Verilog-A Approach Based on Experimental SOI FinFET Characteristics

de Sousa, Bruna Ramos, Agopian, Paula Ghedini Der, Martino, Joao Antonio

Journal:

ECS Transactions

Year:

2020

File:

PDF, 573 KB

2020

22

Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS

Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 179 KB

english, 2006

23

Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications

Marcelo Antonio Pavanello, Paula Ghedini Der Agopian, João Antonio Martino, Denis Flandre

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 253 KB

english, 2006

24

Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS

Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 265 KB

english, 2006

25

Evaluation of graded-channel SOI MOSFET operation at high temperatures

Milene Galeti, Marcelo Antonio Pavanello, João Antonio Martino

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 219 KB

english, 2006

26

Study of the linear kink effect in PD SOI nMOSFETs

Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys

Journal:

Microelectronics Journal

Year:

2007

Language:

english

File:

PDF, 242 KB

english, 2007

27

SOI technology characterization using SOI-MOS capacitor

Victor Sonnenberg, João Antonio Martino

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 395 KB

english, 2005

28

A simple current model for edgeless SOI nMOSFET and a 3-D analysis

Renato Giacomini, João Antonio Martino

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 680 KB

english, 2005

29

High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures

Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Raskin, Denis Flandre

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 364 KB

english, 2005

30

Graded-channel fully depleted Silicon-On-Insulator nMOSFET for reducing the parasitic bipolar effects

Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 357 KB

english, 2000

31

Analog performance and application of graded-channel fully depleted SOI MOSFETs

Marcelo Antonio Pavanello, João Antonio Martino, Vincent Dessard, Denis Flandre

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 203 KB

english, 2000

32

Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures

Marcello Bellodi, João Antonio Martino

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 167 KB

english, 2001

33

Analog circuit design using graded-channel silicon-on-insulator nMOSFETs

Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 540 KB

english, 2002

34

Substrate influences on fully depleted enhancement mode SOI MOSFETs at room temperature and at 77 K

Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 441 KB

english, 1997

35

Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature

Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 443 KB

english, 1997

36

Extraction of the oxide charges at the silicon substrate interface in Silicon-On-Insulator MOSFET's

Marcelo Antonio Pavanello, João Antonio Martino

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 182 KB

english, 1999

37

Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction

Victor Sonnenberg, João Antonio Martino

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 221 KB

english, 1999

38

Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77 K

Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Colinge

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 233 KB

english, 1997

39

Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

Rodrigo Trevisoli Doria, Eddy Simoen, Cor Claeys, João Antonio Martino, Marcelo Antonio Pavanello

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 633 KB

english, 2011

40

On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs

dos Santos, Sara D., Nicoletti, Talitha, Martino, João Antonio, Aoulaiche, Marc, Veloso, Anabela, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.49 MB

english, 2013

41

Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature

Der Agopian, Paula Ghedini, Martino, Joao Antonio, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Claeys, Cor

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.24 MB

english, 2013

42

[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Strain influence on analog performance of single-gate and FinFET SOI nMOSFETs

Martino, Joao Antonio, Pavanello, Marcelo Antonio, Simoen, Eddy, Claeys, Cor

Year:

2008

Language:

english

File:

PDF, 864 KB

english, 2008

43

[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - Behavior of triple gate Bulk FinFETs with and without DTMOS operation

de Andrade, Maria Gloria Cano, Martino, Joao Antonio, Aoulaiche, Marc, Collaert, Nadine, Simoen, Eddy, Claeys, Cor

Year:

2011

Language:

english

File:

PDF, 136 KB

english, 2011

44

Posters: Physiology

Nicoletti, Talitha, Santos, Sara Dereste dos, Martino, João Antonio, Aoulaiche, Marc, Veloso, Anabela, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor

Journal:

Year:

1997

Language:

english

File:

PDF, 4.95 MB

english, 1997

45

Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM

Almeida, Luciano Mendes, Sasaki, Kátia Regina Akemi, Caillat, Christian, Aoulaiche, Marc, Collaert, Nadine, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor, Martino, João Antonio

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 948 KB

english, 2013

46

RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application

de Andrade, Maria Glória Caño, Toledano-Luque, María, Fourati, Fatma, Degraeve, Robin, Martino, João Antonio, Claeys, Cor, Simoen, Eddy, Van den Bosch, Geert, Van Houdt, Jan

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 807 KB

english, 2013

47

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton

de Andrade, Maria Gloria Cano, Martino, Joao Antonio, Aoulaiche, Marc, Collaert, Nadine, Simoen, Eddy, Claeys, Cor

Year:

2012

Language:

english

File:

PDF, 236 KB

english, 2012

48

[IEEE 2013 Symposium on Microelectronics Technology and Devices (SBMicro) - Curitiba, Brazil (2013.09.2-2013.09.6)] 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013) - Fully electron-beam-lithography SOI FinFET

Rangel, Ricardo C., Pojar, Mariana, Seabra, Antonio C., Filho, Sebastiao G. Santos, Martino, Joao A.

Year:

2013

Language:

english

File:

PDF, 1.02 MB

english, 2013

49

[IEEE 2006 International Caribbean Conference on Devices, Circuits and Systems - Playa del Carmen, Mexico (2006.4.26-2006.4.26)] 2006 International Caribbean Conference on Devices, Circuits and Systems - Impact of Asymmetric Channel Configuration on the Linearity of Double-Gate SOI MOSFETs

Pavanello, Marcelo, Cerdeira, Antonio, Martino, Joao, Raskin, Jean-pierre, Flandre, Denis

Year:

2006

Language:

english

File:

PDF, 4.81 MB

english, 2006

50

Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation

de Andrade, Maria Glória Caño, Martino, João Antonio, Simoen, Eddy, Claeys, Cor

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 230 KB

english, 2011